Against the backdrop of the global energy transition, industrial electrification and the rapid expansion of AI infrastructure, electric vehicles, energy storage, AI-server power supplies and high-end equipment are demanding greater efficiency, power density and reliability. As SiC power devices move into wider commercial deployment, advanced packaging is becoming critical to translating device-level performance into system-level gains.

SiC/GaN die-embedded PCB technology can shorten interconnects, reduce parasitic effects and improve thermal management, enabling higher integration and power density in power modules. Its industrial deployment, however, still requires coordinated advances in materials and equipment, embedding processes, reliability qualification and supply chains.

Positioned at the intersection of global technology trends and China’s drive to strengthen its high-end power semiconductor industry, the forum will cover materials, equipment, embedding processes, testing and application validation. It will bring together companies across the value chain, universities and research institutes to share technical advances and engineering practice, and to explore how SiC advanced packaging can move from isolated technical breakthroughs to coordinated value-chain development and scalable deployment.